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 DG411/412/413
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG411 series of monolithic quad analog switches was designed to provide high speed, low error switching of precision analog signals. Combining low power (0.35 W) with high speed (tON: 110 ns), the DG411 family is ideally suited for portable and battery powered industrial and military applications. To achieve high-voltage ratings and superior switching performance, the DG411 series was built on Vishay Siliconix's high voltage silicon gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages up to the supply levels when off. The DG411 and DG412 respond to opposite control logic as shown in the Truth Table. The DG413 has two normally open and two normally closed switches.
FEATURES
* * * * * * * * * * * * * * * * 44 V Supply Max Rating 15 V Analog Signal Range On-Resistance - rDS(on): 25 Fast Switching - tON: 110 ns Ultra Low Power - PD: 0.35 W TTL, CMOS Compatible Single Supply Capability Widest Dynamic Range Low Signal Errors and Distortion Break-Before-Make Switching Action Simple Interfacing Precision Automatic Test Equipment Precision Data Acquisition Communication Systems Battery Powered Systems Computer Peripherals
Pb-free Available
RoHS*
COMPLIANT
BENEFITS
APPLICATIONS
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411 Dual-In-Line and SOIC
IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 D3 IN3 S1 VNC GND S4 Key 4 5 6 7 8 9 10 11 12 13 3 2
DG411 LCC
D1 IN1 NC IN2 D2 1 20 19 18 17 16 15 14 S2 V+ NC VL S3
TRUTH TABLE
Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V DG411 ON OFF DG412 OFF ON
D4 IN4 NC IN3 D3 Top View
DG413 Dual-In-Line and SOIC
IN1 D1 S1 VGND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ VL S3 S4 D3 IN3 9 D4 10 Key 4 5 6 7 8 D1 3 S1 VNC GND 2
DG413 LCC
IN1 NC IN2 1 20 D2 19 18 17 16 15 14 S2 V+ NC VL S3
TRUTH TABLE
Logic 0 1 Logic "0" 0.8 V Logic "1" 2.4 V SW1, SW4 OFF ON SW2, SW3 ON OFF
11
12
13 D3
IN4 NC IN3 Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 70050 S-71241-Rev. E, 25-Jun-07 www.vishay.com 1
DG411/412/413
Vishay Siliconix
ORDERING INFORMATION
Temp Range DG411/DG412 - 40 to 85 C 16-Pin Plastic DIP Package Part Number DG411DJ DG411DJ-E3 DG412DJ DG412DJ-E3 DG411DY DG411DY-E3 DG411DY-T1 DG411DY-T1-E3 16-Pin Narrow SOIC DG412DY DG412DY-E3 DG412DY-T1 DG412DY-T1-E3 DG413 16-Pin Plastic DIP - 40 to 85 C 16-Pin Narrow SOIC DG413DJ DG413DJ-E3 DG413DY DG413DY-E3 DG413DY-T1 DG413DY-T1-E3
- 40 to 85 C
ABSOLUTE MAXIMUM RATINGS
Parameter V+ to VGND to VVL Digital Inputsa, VS, VD Continuous Current (Any Terminal) Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle) Storage Temperature (AK, AZ Suffix) (DJ, DY Suffix) 16-Pin Plastic DIPc Power Dissipation (Package)b 16-Pin Narrow SOICd 16-Pin CerDIPe LCC-20e Limit 44 25 (GND - 0.3) to (V+) + 0.3 (V-) -2 to (V+) + 2 or 30 mA, whichever occurs first 30 100 - 65 to 150 - 65 to 125 470 600 900 900 mW V Unit
mA C
Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/C above 25 C. d. Derate 7.6 mW/C above 75 C. e. Derate 12 mW/C above 75 C.
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Document Number: 70050 S-71241-Rev. E, 25-Jun-07
DG411/412/413
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Specified V+ = 15 V, V- = - 15 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Symbol VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current Digital Control Input Current, VIN Low Input Current, VIN High Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Off Isolatione Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitancee Channel On Capacitancee Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current tON tOFF tD Q OIRR XTALK CS(off) CD(off) CD(on) f = 1 MHz RL = 300 , CL = 35 pF VS = 10 V, See Figure 2 DG413 Only, VS = 10 V RL = 300 , CL = 35 pF Vg = 0 V, Rg = 0 CL = 10 nF RL = 50 , CL = 5 pF, f = 1 MHz Room Full Room Full Room Room Room Room Room Room Room Room Full Room Full Room Full Room Full 110 100 175 240 145 160 175 220 145 160 ID(on) V+ = 13.5 V, V- = - 13.5 V IS = - 10 mA, VD = 8.5 V V+ = 16.5, V- = - 16.5 V VD = 15.5 V, VS = 15.5 V V+ = 16.5 V, V- = - 16.5 V VS = VD = 15.5 V VIN under test = 0.8 V VIN under test = 2.4 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Full Room Full Room Full Room Full Room Full Full Full 25 Typc A Suffix - 55 to 125 C Mind - 15 Maxd 15 35 45 - 0.25 - 20 - 0.25 - 20 - 0.4 - 40 - 0.5 - 0.5 0.25 20 0.25 20 0.4 40 0.5 0.5 - 0.25 -5 - 0.25 -5 - 0.4 - 10 - 0.5 - 0.5 D Suffix - 40 to 85 C Mind - 15 Maxd 15 35 45 0.25 5 0.25 5 0.4 10 0.5 0.5 nA Unit V
0.1 0.1 0.1
IIL IIH
0.005 0.005
A
ns
25 5 68 85 9 9 35 0.0001 - 0.0001 0.0001 - 0.0001 -1 -5 -1 -5 1 5 -1 -5 1 5 -1 -5 1 5 1 5 A pF dB pC
I+ IIL IGND V+ = 16.5 V, V- = - 16.5 V VIN = 0 or 5 V
Document Number: 70050 S-71241-Rev. E, 25-Jun-07
www.vishay.com 3
DG411/412/413
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIESa
Test Conditions Unless Specified V+ = 12 V, V- = 0 V Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make Time Delay Charge Injection Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IV+ = 13.5 V, VIN = 0 or 5 V IL IGND Room Hot Room Hot Room Hot Room Hot 0.0001 - 0.0001 0.0001 - 0.0001 -1 -5 -1 -5 1 5 -5 1 5 -1 -5 1 5 1 5 A tON tOFF tD Q RL = 300 , CL = 35 pF VS = 8 V, See Figure 2 DG413 Only, VS = 8 V RL = 300 , CL = 35 pF Vg = 6 V, Rg = 0 , CL = 10 nF Room Hot Room Hot Room Room 175 95 250 400 125 140 250 315 125 140 Symbol VANALOG rDS(on) V+ = 10.8 V, IS = - 10 mA, VD = 3 V, 8 V VL = 5 V, VIN = 2.4 V, 0.8 Vf Tempb Full Room Full 40 Typc A Suffix - 55 to 125 C Mind Maxd 12 80 100 D Suffix - 40 to 85 C Mind Maxd 12 80 100 Unit V
ns
25 25 pC
Notes: a.Refer to PROCESS OPTION FLOWCHART. b.Room = 25 C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e.Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
50 45 r DS(on) Drain-Source On-Resistance () 40 35 10 V 25 20 15 10 5 0 - 20 - 15 - 10 -5 0 5 10 15 20 VD - Drain Voltage (V) 0 0 2 4 6 8 10 12 14 16 18 20 20 V 50 15 V 12 V V DS(on) () 30 8V TA = 25 C 5V 250 V+ = 3 V VL = 3 V 300 VL = 5 V
200
150 V+ = 5 V 100 8V 12 V 15 V 20 V
VD - Drain Voltage (V)
On-Resistance vs. VD and Power Supply Voltage
On-Resistance vs. VD and Unipolar Supply Voltage
www.vishay.com 4
Document Number: 70050 S-71241-Rev. E, 25-Jun-07
DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
35 r DS(on) - Drain-Source On-Resistance () 30 20 10 I S, I D (pA) 0 - 10 - 20 - 30 - 40 - 50 - 60 - 15 - 10 -5 0 5 10 15 VD or VS - Drain or Source Voltage (V) IS(off) ID(on) V+ = 15 V V- = - 15 V VL = 5 V TA = 25 C V+ = 15 V V- = - 15 V VL = 5 V 125 C 25 85 C 20 25 C 15 - 55 C 10
30
ID(off)
5 - 15 - 10 -5 0 5 10 15
VD - Drain Voltage (V)
Leakage Current vs. Analog Voltage
100 80 60 40 Q (pC) CL = 10 nF 20 0 CL = 1 nF - 20 - 40 - 60 - 15 - 10 -5 0 5 10 15 VS - Source Voltage (V) Q (pC) V+ = 15 V V- = - 15 V VL = 5 V 140 120 100 80 60
ID, IS Leakages vs. Temperature
V+ = 15 V V- = - 15 V VL = 5 V
CL = 10 nF
CL = 1 nF 40 20 0 - 20 - 40 - 60 - 15 - 10 -5 0 5 10 15 VD - Drain Voltage (V)
Charge Injection vs. Analog Voltage
240 210 3.0 180 2.5 V TH (V) 2.0 6.5 V 1.5 1.0 0.5 0 (V+) 5 10 15 20 25 30 35 40 4.5 V 5.5 V t ON t OFF (ns) , VL = 7.5 V 150
Charge Injection vs. Analog Voltage
3.5
V+ = 15 V V- = - 15 V VL = 5 V VS = 10 V
tON 120 tOFF 90 60 30 0 - 55 - 35 - 15 5 25 45 65 85 105 125 Temperature (C)
Input Switching Threshold vs. Supply Voltage
Switching Time vs. Temperature
Document Number: 70050 S-71241-Rev. E, 25-Jun-07
www.vishay.com 5
DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
100 mA 10 mA 1 mA I SUPPLY 100 A 10 A IL 1 A 100 nA 10 nA 10 100 1k 10 k 100 k 1M 10 M V+ = 15 V V- = - 15 V VL = 5 V = 1 SW = 4 SW I+, I-
f - Frequency (Hz)
Supply Current vs. Input Switching Frequency
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S VL VVIN Level Shift/ Drive V+ GND D
V-
Figure 1.
TEST CIRCUITS
+5V + 15 V Logic Input 3V 50 % 0V VL 10 V S IN GND VRL 300 CL 35 pF Switch Output Switch Input* 0V tON VO -V S 90 % V+ D VO Switch Input* VS VO tON tr < 20 ns tf < 20 ns
90 %
- 15 V CL (includes fixture and stray capacitance) VO = V S RL RL + rDS(on)
*VS = 10 V for t ON, V S = - 10 V for tOFF Note: Logic input waveform is inverted for switches that have the opposite logic sense control
Figure 2. Switching Time
www.vishay.com 6
Document Number: 70050 S-71241-Rev. E, 25-Jun-07
DG411/412/413
Vishay Siliconix
TEST CIRCUITS
+5V + 15 V Logic Input VL VS1 VS2 S1 IN1 S2 IN2 GND VD2 VO2 Switch Output RL1 300 RL2 300 CL2 35 pF CL1 35 pF Switch Output 0V VS2 VO2 0V V+ D1 VO1 3V 50 % 0V VS1 VO1
90 %
90 %
tD
tD
- 15 V CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make (DG413)
VO +5V + 15 V VO INX OFF VO CL 10 nF VINX OFF ON Q = V O x CL OFF ON OFF
Rg
VL S IN
V+ D
Vg 3V
GND
- 15 V
INX dependent on switch configuration Input polarity determined by sense of switch.
Figure 4. Charge Injection
C
+5V
+ 15 V
C
VL VS Rg = 50 0 V, 2.4 V S2 NC IN2 GND VS VO VS1 IN1
V+ D1 50
D2 RL C
VO
0 V, 2.4 V
XTA LK Isolation = 20 log C = RF bypass
- 15 V
Figure 5. Crosstalk
Document Number: 70050 S-71241-Rev. E, 25-Jun-07
www.vishay.com 7
DG411/412/413
Vishay Siliconix
+5V C VL VS Rg = 50 0 V, 2.4 V IN S
+ 15 V C C
V+
+5V
+ 15 V C
D
VO
VL
V+
S RL 50 IN GND VC 0 V, 2.4 V D - 15 V VS VO C = RF Bypass - 15 V GND VC Meter HP4192A Impedance Analyzer or Equivalent
Off Isolation = 20 log
Figure 6. Off Isolation
Figure 7. Source/Drain Capacitances
APPLICATIONS
Single Supply Operation: The DG411/412/413 can be operated with unipolar supplies from 5 V to 44 V. These devices are characterized and tested for unipolar supply operation at 12 V to facilitate the majority of applications. In single supply operation, V+ is tied to VL and V- is tied to 0 V. See Input Switching Threshold vs. Supply Voltage curve for VL versus input threshold requirments. Summing Amplifier When driving a high impedance, high capacitance load such as shown in Figure 8, where the inputs to the summing amplifier have some noise filtering, it is necessary to have shunt switches for rapid discharge of the filter capacitor, thus preventing offsets from occurring at the output.
R1 VIN 1
R2
C1 R5
R3 VIN 2
R4 - VOUT + C2 R6
DG413
Figure 8. Summing Amplifier
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70050.
www.vishay.com 8
Document Number: 70050 S-71241-Rev. E, 25-Jun-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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